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NXP Semiconductors
PTVSxP1UP series
600 W Transient Voltage Suppressor
150
I PP
(%)
100
100 % I PP ; 10 μ s
006aab319
1.2
P PPM
P PPM(25 ° C)
0.8
006aab321
50 % I PP ; 1000 μ s
50
0
0.4
0
0
1.0
2.0
3.0
t p (ms)
4.0
0
50
100
150
T j ( ° C)
200
Fig 1.
10/1000 μ s pulse waveform according to
IEC 61643-321
Fig 2.
Relative variation of rated peak pulse power as
a function of junction temperature; typical
values
10 5
P PPM
(W)
10 4
006aac172
10 4
C d
(pF)
10 3
(1)
006aac173
(2)
(3)
10 3
10 2
(4)
10 2
10 ? 1
1
10
10 2
10 3
t p ( μ s)
10 4
10
1
10
V R (V)
10 2
T amb = 25 ° C
T amb = 25 ° C; f = 1 MHz
(1) PTVS5V0P1UP
(2) PTVS12VP1UP
(3) PTVS24VP1UP
(4) PTVS64VP1UP
Fig 3.
Rated peak pulse power as a function of pulse
duration; typical values
Fig 4.
Diode capacitance as a function of reverse
voltage; typical values
PTVSXP1UP_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 6 January 2011
? NXP B.V. 2011. All rights reserved.
6 of 12
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